? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 50 v v dgr t j = 25 c to 150 c, r gs = 1m - 50 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c (chip capability) -140 a i lrms lead current limit, rms -120 a i dm t c = 25 c, pulse width limited by t jm - 420 a i a t c = 25 c - 70 a e as t c = 25 c1j p d t c = 25 c 298 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100027c(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 50 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss, v gs = 0v -10 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 9 m trenchp tm power mosfets p-channel enhancement mode avalanche rated IXTA140P05T ixtp140p05t ixth140p05t v dss = - 50v i d25 = - 140a r ds(on) 9 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA140P05T ixtp140p05t ixth140p05t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 44 72 s c iss 13.5 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 1640 pf c rss 640 pf t d(on) 28 ns t r 34 ns t d(off) 38 ns t f 25 ns q g(on) 200 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 nc q gd 65 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v -140 a i sm repetitive, pulse width limited by t jm - 560 a v sd i f = - 70a, v gs = 0v, note 1 -1.3 v t rr 53 ns q rm 58 nc i rm - 2.2 a resistive switching times v gs = -10v, v ds = - 30v, i d = - 50a r g = 1 (external) i f = - 70a, -di/dt = -100a/ s v r = - 25v, v gs = 0v to-247 outline pins: 1 - gate 2 - drain 3 - source to-220 outline 1 = gate 2 = drain 3 = source to-263 outline pins: 1 - gate 2,4 - drain 3 - source
? 2013 ixys corporation, all rights reserved IXTA140P05T ixtp140p05t ixth140p05t fig. 1. output characteristics @ t j = 25oc -140 -120 -100 -80 -60 -40 -20 0 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -350 -300 -250 -200 -150 -100 -50 0 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -140 -120 -100 -80 -60 -40 -20 0 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 5v - 6v fig. 4. r ds(on) normalized to i d = - 70a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 140a i d = - 70a fig. 5. r ds(on) normalized to i d = - 70a value vs. drain current 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -350 -300 -250 -200 -150 -100 -50 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -140 -120 -100 -80 -60 -40 -20 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTA140P05T ixtp140p05t ixth140p05t fig. 7. input admittance -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -300 -250 -200 -150 -100 -50 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20406080100120140160180200 q g - nanocoulombs v gs - volts v ds = - 25v i d = - 70a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - - -- - 100ms external lead current limit
? 2013 ixys corporation, all rights reserved IXTA140P05T ixtp140p05t ixth140p05t fig. 14. resistive turn-on rise time vs. drain current 22 24 26 28 30 32 34 36 38 -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 30v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 40 80 120 160 200 240 02468101214161820 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 30v i d = - 50a, - 25a fig. 16. resistive turn-off switching times vs. junction temperature 22 23 24 25 26 27 28 29 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 30v i d = - 25a, - 50a fig. 17. resistive turn-off switching times vs. drain current 30 35 40 45 50 55 60 65 70 -50 -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 -28 -26 -24 i d - amperes t f - nanoseconds 22 23 24 25 26 27 28 29 30 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 30v t j = 25oc, 125oc fig. 13. resistive turn-on rise time vs. junction temperature 22 24 26 28 30 32 34 36 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 30v i d = - 25a i d = - 50a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 02468101214161820 r g - ohms t f - nanoseconds 20 60 100 140 180 220 260 300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 30v i d = - 25a, - 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA140P05T ixtp140p05t ixth140p05t ixys ref: t_140p05t(a6)11-08-10-a fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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